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J-GLOBAL ID：201902103528412990   Reference number：19S2491857

High Microwave and Ultra-Low Noise Performance of Fully Ion-Implanted GaAs MESFET’s with Au/WSiN T-Shaped Gate

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Author (4)：
Onodera, Kiyomitsu

About Onodera, Kiyomitsu

(NTT Electronics Technology)

About NTT Electronics Technology

, 
Nishimura, Kazumi

About Nishimura, Kazumi

(NTT Electronics Technology)

About NTT Electronics Technology

, 
Asai, Kazuyoshi

About Asai, Kazuyoshi

(NTT Electronics Technology)

About NTT Electronics Technology

, 
Sugitani, Suehiro

About Sugitani, Suehiro

(NTT Electronics Technology)

About NTT Electronics Technology


Material：
IEEE Transactions on Electron Devices

About IEEE Transactions on Electron Devices


Volume： 40  Issue： 1  Page： 18-24  Publication year： 1993 
JST Material Number： SCOPUS  ISSN： 0018-9383 
Language： English (EN)
Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

About GaAs

, 
MESFET

About MESFET

, 
Au

About Au


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