Fabrication technique for Si single-electron transistor operating at room temperature

Takahashi, Y.; Nagase, M.; Namatsu, H.; Kurihara, K.; Iwdate, K.; Nakajima, Y.; Horiguchi, S.; Murase, K.; Tabe, M.

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J-GLOBAL ID：201902113692294074 Reference number：19S2352874

Fabrication technique for Si single-electron transistor operating at room temperature

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Author (9)： , , , , , , , ,
Material：
Volume： 31 Issue： 2 Page： 136-137 Publication year： 1995
JST Material Number： SCOPUS ISSN： 0013-5194 CODEN： ELLEA

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