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J-GLOBAL ID：201902114392972255   Reference number：19S2350335

Nitrogen donors and deep levels in high-quality 4H-SiC epilayers grown by chemical vapor deposition

Author (10)： Kimoto, T. (Department of Electronic Science and Engineering, Kyoto University) ,  Itoh, A. (Department of Electronic Science and Engineering, Kyoto University) ,  Matsunami, H. (Department of Electronic Science and Engineering, Kyoto University) ,  Sridhara, S. (Department of Physics and Astronomy, University of Pittsburgh) ,  Clemen, L. L. (Department of Physics and Astronomy, University of Pittsburgh) ,  Devaty, R. P. (Department of Physics and Astronomy, University of Pittsburgh) ,  Choyke, W. J. (Department of Physics and Astronomy, University of Pittsburgh) ,  Dalibor, T. (Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg) ,  Peppermüller, C. (Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg) ,  Pensl, G. (Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg)
Material： Applied Physics Letters
Volume： 67  Page： 2833-  Publication year： 1995 
JST Material Number： SCOPUS  ISSN： 0003-6951 
Language： English (EN)