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J-GLOBAL ID：201902117799949630   Reference number：19S2868769

High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

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Author (4)：
Nakamura, Shuji

About Nakamura, Shuji

(Department of Research and Development, Nichia Chemical Industries, Ltd.)

About Department of Research and Development, Nichia Chemical Industries, Ltd.

, 
Senoh, Masayuki

About Senoh, Masayuki

(Department of Research and Development, Nichia Chemical Industries, Ltd.)

About Department of Research and Development, Nichia Chemical Industries, Ltd.

, 
Iwasa, Naruhito

About Iwasa, Naruhito

(Department of Research and Development, Nichia Chemical Industries, Ltd.)

About Department of Research and Development, Nichia Chemical Industries, Ltd.

, 
Nagahama, Shin-Ichi

About Nagahama, Shin-Ichi

(Department of Research and Development, Nichia Chemical Industries, Ltd.)

About Department of Research and Development, Nichia Chemical Industries, Ltd.


Material：
Japanese Journal of Applied Physics

About Japanese Journal of Applied Physics


Volume： 34  Issue： 7  Page： L797-L799  Publication year： 1995 
JST Material Number： SCOPUS  ISSN： 0021-4922 
Language： English (EN)
Terms in the title (1)：
Terms in the title
Keywords automatically extracted from the title.
InGaN

About InGaN


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