Art

J-GLOBAL ID：201902118152423624   Reference number：19S0879644

Multiple-step electron charging in Si quantum-dot floating gate MOS memories

Author (4)： Ikeda, M. (Department of Electrical Engineering, Graduate School of Engineering, Hiroshima University) ,  Shimizu, Y. (Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University) ,  Murakami, H. (Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University) ,  Miyazaki, S. (Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University)
Material： 2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Page： 116-117  Publication year： 2002 
JST Material Number： SCOPUS  ISBN： 9784891140311 
Country of issue： United States (USA)  Language： English (EN)

Terms in the title (2)： Si ,  MOS