Art

J-GLOBAL ID：201902201946718607   Reference number：19S0624972

Total ionization damage effects in double silicon-on-Insulator devices

Author (13)： Honda, S. (Graduate School of Pure and Applied Sciences, University of Tsukuba) ,  Hara, K. (Graduate School of Pure and Applied Sciences, University of Tsukuba) ,  Asano, M. (Graduate School of Pure and Applied Sciences, University of Tsukuba) ,  Maeda, T. (Graduate School of Pure and Applied Sciences, University of Tsukuba) ,  Tobita, N. (Graduate School of Pure and Applied Sciences, University of Tsukuba) ,  Arai, Y. (Institute of Particle and Nuclear Studies, High Energy Accelerator Organization (KEK)) ,  Miyoshi, T. (Institute of Particle and Nuclear Studies, High Energy Accelerator Organization (KEK)) ,  Ohno, M. (National Institute of Advanced Industrial Science and Technology (AIST)) ,  Hatsui, T. (RIKEN SPring-8 Center, RIKEN) ,  Tsuru, T. (Division of Physics and Astronomy, Graduate School of Science, Kyoto University) ,  Miura, N. (Lapis Semiconductor Miyagi Co., Ltd.) ,  Kasai, H. (Lapis Semiconductor Miyagi Co., Ltd.) ,  Okihara, M. (Lapis Semiconductor Co., Ltd.)
Material： IEEE Nuclear Science Symposium Conference Record
Publication year： 2013 
JST Material Number： SCOPUS  ISSN： 1095-7863  ISBN： 9781479905348  CODEN： 85OQA 
Country of issue： United States (USA)  Language： English (EN)