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J-GLOBAL ID：201902202811093387   Reference number：19S1665305

Electroluminescence in metal-oxide-semiconductor tunnel diodes with nanometer-thick silicon

Author (8)： Morita, Mizuho (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University) ,  Tsuchida, Ayano (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University) ,  Matsumura, Kei (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University) ,  Yamada, Ryuta (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University) ,  Oshikane, Yasushi (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University) ,  Kawai, Kentaro (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University) ,  Uchikoshi, Junichi (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University) ,  Arima, Kenta (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University)
Material： ECS Transactions
Volume： 45  Issue： 5  Page： 229-234  Publication year： 2012 
JST Material Number： SCOPUS  ISSN： 1938-5862  ISBN： 9781566779579 
Country of issue： United States (USA)  Language： English (EN)