Art

J-GLOBAL ID：201902203419488035   Reference number：19S0601982

Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray, gamma ray spectroscopic detector development

Author (10)： Niraula, Madan (Nagoya Institute of Technology, Graduate School of Engineering) ,  Yasuda, Kazuhito (Nagoya Institute of Technology, Graduate School of Engineering) ,  Yamashita, Hayate (Nagoya Institute of Technology, Graduate School of Engineering) ,  Wajima, Yuto (Nagoya Institute of Technology, Graduate School of Engineering) ,  Tsukamoto, Yudai (Nagoya Institute of Technology, Graduate School of Engineering) ,  Matsumoto, Masahiko (Nagoya Institute of Technology, Graduate School of Engineering) ,  Suzuki, Yuta (Nagoya Institute of Technology, Graduate School of Engineering) ,  Takai, Noriaki (Nagoya Institute of Technology, Graduate School of Engineering) ,  Tsukamoto, Yuki (Nagoya Institute of Technology, Graduate School of Engineering) ,  Agata, Yasunori (Nagoya Institute of Technology, Graduate School of Engineering)
Material： Physica Status Solidi (C) Current Topics in Solid State Physics
Volume： 11  Issue： 7-8  Page： 1333-1336  Publication year： 2014 
JST Material Number： SCOPUS  ISSN： 1862-6351 
Country of issue： Germany (DEU)  Language： English (EN)

Terms in the title (2)： CdTe ,  Si