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J-GLOBAL ID：201902204269617857   Reference number：19S1166548

Precise control of field emission current by a built-in poly-Si thin film transistor

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Author (4)：
Nagao, M.

About Nagao, M.

(National Institute of Advanced Industrial Science and Technology (AISI), AIST Tsukuba Central 2)

About National Institute of Advanced Industrial Science and Technology (AISI), AIST Tsukuba Central 2

, 
Yasumuro, C.

About Yasumuro, C.

(National Institute of Advanced Industrial Science and Technology (AISI), AIST Tsukuba Central 2)

About National Institute of Advanced Industrial Science and Technology (AISI), AIST Tsukuba Central 2

, 
Kanemaru, S.

About Kanemaru, S.

(National Institute of Advanced Industrial Science and Technology (AISI), AIST Tsukuba Central 2)

About National Institute of Advanced Industrial Science and Technology (AISI), AIST Tsukuba Central 2

, 
Itoh, J.

About Itoh, J.

(National Institute of Advanced Industrial Science and Technology (AISI), AIST Tsukuba Central 2)

About National Institute of Advanced Industrial Science and Technology (AISI), AIST Tsukuba Central 2


Material：
Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV

About Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV


Volume： 2  Page： 853-856  Publication year： 2006 
JST Material Number： SCOPUS  ISSN： 1093-2941  ISBN： 9781424401925 
Country of issue： United States (USA)  Language： English (EN)

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