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J-GLOBAL ID：201902206523225240   Reference number：19S0485287

Normally-off GaN MOSFETs with high-k dielectric CeO2 films deposited by RF sputtering

Author (7)： Ogawa, Hiroki (Department of Electrical and Electronics Engineering, Hosei University) ,  Okazaki, Takuya (Department of Electrical and Electronics Engineering, Hosei University) ,  Kasai, Hayao (Department of Electrical and Electronics Engineering, Hosei University) ,  Hara, Kenta (Department of Electrical and Electronics Engineering, Hosei University) ,  Notani, Yuki (Department of Electrical and Electronics Engineering, Hosei University) ,  Yamamoto, Yasuhiro (Department of Electrical and Electronics Engineering, Hosei University) ,  Nakamura, Tohru (Department of Electrical and Electronics Engineering, Hosei University)
Material： Physica Status Solidi (C) Current Topics in Solid State Physics
Volume： 11  Issue： 2  Page： 302-306  Publication year： 2014 
JST Material Number： SCOPUS  ISSN： 1862-6351 
Country of issue： Germany (DEU)  Language： English (EN)

Terms in the title (2)： GaN ,  RF