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J-GLOBAL ID:201902210815909471   Reference number:19A1873430

Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method

Naフラックス法を用いて成長させたGaNバルク単結晶における貫通転位の電流漏れと構造特性の間の相関
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Material:
Volume: 58  Issue: SC  Page: SCCB23.1-SCCB23.6  Publication year: Jun. 2019 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Lattice defects in semiconductors 

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