Art

J-GLOBAL ID：201902212857428001   Reference number：19S1347795

A 'smart stack' triple-junction cell consisting of InGaP/GaAs and crystalline Si

Author (9)： Mizuno, Hidenori (Renewable Energy Research Center, Fukushima Renewable Energy Institute, National Institute of Advanced Industrial Science and Technology) ,  Mochizuki, Toshimitsu (Renewable Energy Research Center, Fukushima Renewable Energy Institute, National Institute of Advanced Industrial Science and Technology) ,  Takato, Hidetaka (Renewable Energy Research Center, Fukushima Renewable Energy Institute, National Institute of Advanced Industrial Science and Technology) ,  Makita, Kikuo (Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology) ,  Tayagaki, Takeshi (Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology) ,  Sugaya, Takeyoshi (Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology) ,  Mehrvarz, Hamid (Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable Energy Engineering, University of New South Wales) ,  Green, Martin (Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable Energy Engineering, University of New South Wales) ,  Ho-Baillie, Anita (Australian Centre for Advanced Photovoltaics (ACAP), School of Photovoltaic and Renewable Energy Engineering, University of New South Wales)
Material： Conference Record of the IEEE Photovoltaic Specialists Conference
Volume： 2016-November  Page： 1923-1925  Publication year： 2016 
JST Material Number： SCOPUS  ISSN： 0160-8371  ISBN： 9781509027248  CODEN： CRCND 
Country of issue： United States (USA)  Language： English (EN)

Terms in the title (4)： SMART ,  InGaP ,  GaAs ,  Si