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J-GLOBAL ID：201902214261060736   Reference number：19A0877030

Structure dependence of GaN-based nanopillar-shaped crystals grown on a quartz glass substrate on their growth conditions

成長条件で石英ガラス基板上に成長させたGaNベースのnanopillar型結晶の構造依存性【JST・京大機械翻訳】

Author (3)： Sato Y. (Electrical and Electronic Engineering Course, Graduate School of Engineering Science, Akita University, Akita, Japan) ,  Fujiwara A. (Electrical and Electronic Engineering Course, Graduate School of Engineering Science, Akita University, Akita, Japan) ,  Shimomura K. (Electrical and Electronic Engineering Course, Graduate School of Engineering Science, Akita University, Akita, Japan)
Material： Applied Physics. A. Materials Science & Processing  (Applied Physics. A. Solids and Surfaces)
Volume： 125  Issue： 2  Page： 1-6  Publication year： 2019 
JST Material Number： D0256C  ISSN： 0947-8396  CODEN： APHYCC  Document type： Article
Article type： 短報  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Nanopillar-shaped crystals of ...

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Thesaurus term： Gallium ,  *crystal ,  *substrate (plate) ,  MBE growth ,  Indium ,  flow rate ,  *gallium nitride ,  semiconductor ,  *silica glass ,  nitrogen gas ,  nitrogen source ,  RF plasma ,  *structure dependence
Semi thesaurus term： *成長条件 , 【Automatic Indexing@JST】

JST classification (2)： Crystal growth of semiconductors  (BK13040X) ,  Oxide thin films  (BK14050P)

Terms in the title (6)： 成長条件 ,  石英ガラス基板 ,  成長 ,  GaN ,  結晶 ,  構造依存性