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J-GLOBAL ID：201902214797694869   Reference number：19S0098975

Interplay between negative photoconductivity and enhanced Andreev reflection in InGaAs-based S-Sm-S junctions when exposed to infrared light

Author (9)： Akazaki, T. (NTT Basic Research Laboratories, NTT Corporation) ,  Akazaki, T. (Core Research for Evolutional Science and Technology, Japan Science and Technology Agency) ,  Hashiba, H. (NTT Basic Research Laboratories, NTT Corporation) ,  Hashiba, H. (Core Research for Evolutional Science and Technology, Japan Science and Technology Agency) ,  Yamaguchi, M. (NTT Basic Research Laboratories, NTT Corporation) ,  Tsumura, K. (Institute of Physics, University of Tsukuba) ,  Nomura, S. (Institute of Physics, University of Tsukuba) ,  Takayanagi, H. (Research Institute for Science and Technology, Tokyo University of Science) ,  Takayanagi, H. (Core Research for Evolutional Science and Technology, Japan Science and Technology Agency)
Material： Journal of Physics: Conference Series
Volume： 150  Issue： 5  Publication year： 2009 
JST Material Number： SCOPUS  ISSN： 1742-6588 
Country of issue： United Kingdom (GBR)  Language： English (EN)

Terms in the title (1)： LIGHT