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J-GLOBAL ID：201902216544344848   Reference number：19S0031959

Nonvolatile static random access memory based on spin-transistor architecture

Author (7)： Shuto, Yusuke (Imaging Science and Engineering Laboratory, Tokyo Institute of Technology) ,  Shuto, Yusuke (CREST, Japan Science and Technology Agency) ,  Sugahara, Satoshi (Imaging Science and Engineering Laboratory, Tokyo Institute of Technology) ,  Sugahara, Satoshi (CREST, Japan Science and Technology Agency) ,  Sugahara, Satoshi (Department of Electronics and Applied Physics, Tokyo Institute of Technology) ,  Yamamoto, Shuu'Ichirou (CREST, Japan Science and Technology Agency) ,  Yamamoto, Shuu'Ichirou (Department of Information Processing, Tokyo Institute of Technology)
Material： Journal of Applied Physics
Volume： 105  Issue： 7  Publication year： 2009 
JST Material Number： SCOPUS  ISSN： 0021-8979  CODEN： JAPIA 
Country of issue： United States (USA)  Language： English (EN)