Strain mapping at the interface of InP/In<sub>x</sub>Ga<sub>1-x</sub>As/InP as measured by the scanning transmission electron microscope-moire fringe method

CHEN Tongmin; AKABORI Masashi; OSHIMA Yoshifumi

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J-GLOBAL ID：201902218023980653 Reference number：19A2841853

Strain mapping at the interface of InP/In_xGa_1-xAs/InP as measured by the scanning transmission electron microscope-moire fringe method

走査透過電子顕微鏡-モアレ縞法により測定したInP/In_xGa_1-xAs/InPの界面における歪マッピング

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Volume： 12 Issue： 10 Page： 105504.1-105504.4 Publication year： Oct. 2019
JST Material Number： F0599C ISSN： 1882-0778 CODEN： APEPC4 Document type： Article
Article type：短報 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Surface structure of semiconductors , Lattice defects in semiconductors

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Strain mapping at the interface of InP/InxGa1-xAs/InP as measured by the scanning transmission electron microscope-moire fringe method

Strain mapping at the interface of InP/In_xGa_1-xAs/InP as measured by the scanning transmission electron microscope-moire fringe method