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J-GLOBAL ID：201902218680824392   Reference number：19S1685282

Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

Author (12)： Chiu, C. H. (Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University) ,  Lin, D. W. (Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University) ,  Li, Z. Y. (Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University) ,  Kuo, H. C. (Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University) ,  Lu, T. C. (Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University) ,  Wang, S. C. (Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University) ,  Liao, W. T. (Department of Opto-Electronics Epitaxy and Devices, Industrial Technology Research Institute) ,  Lin, C. C. (Institute of Photonic Systems, College of Photonics, National Chiao-Tung University) ,  Tanikawa, T. (Department of Electronics, Nagoya University) ,  Honda, Y. (Department of Electronics, Nagoya University) ,  Yamaguchi, M. (Department of Electronics, Nagoya University) ,  Sawaki, N. (Department of Electrical and Electronic Engineering, Aichi Institute of Technology)
Material： Optics InfoBase Conference Papers
Publication year： 2011 
JST Material Number： SCOPUS  ISSN： 2162-2701  ISBN： 9781557529107 
Country of issue： United States (USA)  Language： English (EN)

Terms in the title (3)： InGaN ,  GaN ,  LIGHT