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J-GLOBAL ID：201902219567506844   Reference number：19S1445966

Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs

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Author (4)：
Mori, Seigo

About Mori, Seigo

(Department of Electronic Science and Engineering, Kyoto University)

About Department of Electronic Science and Engineering, Kyoto University

, 
Morioka, Naoya

About Morioka, Naoya

(Department of Electronic Science and Engineering, Kyoto University)

About Department of Electronic Science and Engineering, Kyoto University

, 
Suda, Jun

About Suda, Jun

(Department of Electronic Science and Engineering, Kyoto University)

About Department of Electronic Science and Engineering, Kyoto University

, 
Kimoto, Tsunenobu

About Kimoto, Tsunenobu

(Department of Electronic Science and Engineering, Kyoto University)

About Department of Electronic Science and Engineering, Kyoto University


Material：
2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

About 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012


Publication year： 2012 
JST Material Number： SCOPUS  ISBN： 9781467309943 
Country of issue： United States (USA)  Language： English (EN)

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