Art
J-GLOBAL ID:201902220138094515   Reference number:19A0127645

Low temperature preparation of HfO2/SiO2 stack structure for interface dipole modulation

界面双極子変調のためのHfO_2/SiO_2スタック構造の低温調製【JST・京大機械翻訳】
Author (1):
Material:
Volume: 113  Issue: 25  Page: 251601-251601-5  Publication year: 2018 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Abstract/Point:
Abstract/Point
Japanese summary of the article(about several hundred characters).
All summary is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
In this study, we found that s...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=19A0127645&from=J-GLOBAL&jstjournalNo=H0613A") }}
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
, 【Automatic Indexing@JST】
JST classification (2):
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures  ,  Dielectrics in general 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page