Art

J-GLOBAL ID：201902221380930612   Reference number：19S1378745

Electrical properties and TDDB performance of Cu interconnects using ALD Ta(Al)N barrier and Ru liner for 7nm node and beyond

Author (9)： Kikuchi, Yuki (Leading Edge Process Development Center, Tokyo Electron Ltd.) ,  Kawasaki, Hiroaki (Leading Edge Process Development Center, Tokyo Electron Ltd.) ,  Nagai, Hiroyuki (Leading Edge Process Development Center, Tokyo Electron Ltd.) ,  Yu, Kai-Hung (TEL Technology Center, America, LLC) ,  Oie, Manabu (TEL Technology Center, America, LLC) ,  Consiglio, Steve (TEL Technology Center, America, LLC) ,  Wajda, Cory (TEL Technology Center, America, LLC) ,  Maekawa, Kaoru (TEL Technology Center, America, LLC) ,  Leusink, Gert (TEL Technology Center, America, LLC)
Material： 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Page： 99-101  Publication year： 2016 
JST Material Number： SCOPUS  ISBN： 9781509003860 
Country of issue： United States (USA)  Language： English (EN)

Terms in the title (6)： TDDB ,  Cu ,  ALD ,  Ta ,  Al ,  Ru