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J-GLOBAL ID：201902221951225315   Reference number：19A0016612

Preparation and some properties of Mg₂Si_0.53Ge_0.47 single crystal and Mg₂Si_0.53Ge_0.47 pn-junction diode

Mg_2Si_0.53Ge_0.47単結晶とMg_2Si_0.53Ge_0.47pn接合ダイオードの作製といくつかの特性【JST・京大機械翻訳】

Author (6)： El-Amir Ahmed A. M. (National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Ohsawa Takeo (National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Matsushita Yoshitaka (National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Wada Yoshiki (National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Shimamura Kiyoshi (National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Ohashi Naoki (National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan)
Material： AIP Advances (Web)
Volume： 8  Issue： 11  Page： 115005-115005-5  Publication year： 2018 
JST Material Number： U7121A  ISSN： 2158-3226  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： This paper reports the results...

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Thesaurus term： *bonding and joining ,  photodiode ,  rectification (electric) ,  carrier density ,  electrical resistivity ,  Silver ,  *PN junction ,  symmetry ,  *crystal ,  X-Ray Diffraction ,  *single crystal ,  *diode ,  characterization ,  crystal growth ,  *junction diode

JST classification (2)： Electric conduction in crystalline semiconductors  (BM03043X) ,  Crystal growth of semiconductors  (BK13040X)

Terms in the title (3)： 単結晶 ,  ダイオード ,  作製