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J-GLOBAL ID:201902221951225315   Reference number:19A0016612

Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode

Mg_2Si_0.53Ge_0.47単結晶とMg_2Si_0.53Ge_0.47pn接合ダイオードの作製といくつかの特性【JST・京大機械翻訳】
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Volume:Issue: 11  Page: 115005-115005-5  Publication year: 2018 
JST Material Number: U7121A  ISSN: 2158-3226  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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This paper reports the results...
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Electric conduction in crystalline semiconductors  ,  Crystal growth of semiconductors 
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