Art

J-GLOBAL ID：201902223351478338   Reference number：19A0127696

Perspective: Ga₂O₃ for ultra-high power rectifiers and MOSFETS

超高電力整流器とMOSFET用のGa_2O_3【JST・京大機械翻訳】

Author (4)： Pearton S. J. (Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA) ,  Ren Fan (Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA) ,  Tadjer Marko (U.S. Naval Research Laboratory, Washington, DC 20375, USA) ,  Kim Jihyun (Department of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 124  Issue： 22  Page： 220901-220901-19  Publication year： 2018 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Gallium oxide (Ga₂O...

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Thesaurus term： doping ,  *MOSFET ,  power electronics ,  semiconductor ,  electric field ,  silicon carbide ,  electronics ,  substrate(plate) ,  metal ,  gallium nitride ,  heat sink ,  sapphire ,  *rectifier ,  optimization ,  band gap

JST classification (2)： Electric conduction in crystalline semiconductors  (BM03043X) ,  Transistors  (NC03070N)

Terms in the title (3)： 高電力 ,  整流器 ,  MOSFET