Art

J-GLOBAL ID：201902224486141936   Reference number：19A1328624

Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators

反強誘電体ゲート絶縁体を用いたSi MOSFETの駆動電流増強

Author (4)： YAMAGUCHI Masashi (Univ. Tokyo, Tokyo, JPN) ,  GOTOW Takahiro (Univ. Tokyo, Tokyo, JPN) ,  TAKENAKA Mitsuru (Univ. Tokyo, Tokyo, JPN) ,  TAKAGI Shinichi (Univ. Tokyo, Tokyo, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 58  Issue： SB  Page： SBBA15.1-SBBA15.6  Publication year： Apr. 2019 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *antiferroelectrics ,  *gate dielectric film ,  silicon ,  *MOSFET ,  *electric current ,  hysteresis ,  characteristic ,  hafnium compound ,  zirconium compound ,  oxide ,  film thickness
Semi thesaurus term： *gate dielectric ,  *drive current ,  polarization hysteresis ,  transfer characteristics

JST classification (2)： Transistors  (NC03070N) ,  Ferroelectrics,antiferroelectrics and ferroelasticity  (BM05030B)

Reference (32)：

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• G. Pahwa, T. Dutta, A. Agarwal, S. Khandelwal, S. Salahuddin, C. Hu, and Y. S. Chauhan, IEEE Trans. Electron Devices 63, 4981 (2016).
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Terms in the title (6)： 反強誘電体 ,  ゲート絶縁体 ,  Si ,  MOSFET ,  駆動電流 ,  増強