Art

J-GLOBAL ID：201902225009713237   Reference number：19A2741054

Characteristics of Multi-photon Absorption in a β-Ga₂O₃ Single Crystal

β-Ga₂O₃単結晶の多光子吸収特性

Author (3)： YAMAOKA Suguru (Osaka City Univ., Osaka, JPN) ,  MIKUNI Yusuke (Osaka City Univ., Osaka, JPN) ,  NAKAYAMA Masaaki (Osaka City Univ., Osaka, JPN)
Material： Journal of the Physical Society of Japan  (JPSJ)
Volume： 88  Issue： 11  Page： 113701.1-113701.3  Publication year： Nov. 15, 2019 
JST Material Number： G0509A  ISSN： 0031-9015  CODEN： JUPSA  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *gallium oxide ,  compound semiconductor ,  multiple quantum transition ,  *self-trapped exciton ,  photoluminescence ,  electronic transition ,  transition energy ,  conduction band ,  valence band ,  interband transition ,  optical transition ,  oxide semiconductor ,  *multi-photon absorption

JST classification (4)： Electronic structure of crystalline semiconductors  (BM02060N) ,  Luminescence of semiconductors  (BM08092S) ,  Excitons  (BM02120E) ,  Nonlinear optics  (BD05000T)

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Terms in the title (3)： β-Ga2O3 ,  単結晶 ,  多光子吸収