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J-GLOBAL ID:201902230389644383   Reference number:19A2598658

水素プラズマ処理導入によるダイヤモンド(111)MOS構造の界面準位密度低減とMOSFETのチャネル移動度向上

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Material:
Volume: 80th  Page: ROMBUNNO.18p-PA4-22  Publication year: Sep. 04, 2019 
JST Material Number: Y0055B  ISSN: 2758-4704  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Transistors  ,  LCR parts 

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