Art

J-GLOBAL ID：201902235127138063   Reference number：19A0491397

Ferroelectricity in Simple Binary Crystals

単純な二元結晶における強誘電性【JST・京大機械翻訳】

Author (2)： Onodera Akira (Department of Physics, Faculty of Science, Hokkaido University, Sapporo 060-0810, Japan) ,  Takesada Masaki (Department of Physics, Faculty of Science, Hokkaido University, Sapporo 060-0810, Japan)
Material： Crystals (Web)
Volume： 7  Issue： 8  Page： 232  Publication year： 2017 
JST Material Number： U7169A  ISSN： 2073-4352  Document type： Article
Article type： 文献レビュー  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Abstract/Point： The origin of ferroelectricity...

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Thesaurus term： Hydrochloric Acid ,  hafnium oxide ,  chemical bond ,  doping ,  dopant ,  *ferroelectricity ,  *crystal ,  zinc oxide ,  complementary metal oxide semiconductor ,  ferroelectrics
Semi thesaurus term： 現象論 , 【Automatic Indexing@JST】

Author keywords (5)： ferroelectric ,  binary crystal ,  ZnO ,  HfO₂ ,  mixed bond

JST classification (2)： Oxide thin films  (BK14050P) ,  Ferroelectrics,antiferroelectrics and ferroelasticity  (BM05030B)

Reference (49)：

• Auciello, O.; Scott, J.F.; Ramesh, R. Ultrahigh-Intensity Lasers: Physics of the Extreme on a Tabletop. Phys. Today 1998, 51, 22.
• Scott, J.F. The physics of ferroelectric ceramic thin films for memory applications. Ferroelectr. Rev. 1998, 1, 1.
• Haertling, G.H. Ferroelectric Ceramics: History and Technology. J. Am. Ceram. Soc. 1999, 82, 797-818.
• Scott, J.F.; Paz de Araujo, C.A. Ferroelectric memories. Science 1989, 246, 1400-1405.
• Uchino, K. Ceramic actuators: Principles and applications. MRS Bull. 1993, 18, 42-48.

Terms in the title (2)： 結晶 ,  強誘電性