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J-GLOBAL ID：201902240794870306   Reference number：19A0626053

Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates

InP基板上のII-VI化合物半導体光学素子のn側構造の研究【JST・京大機械翻訳】

Author (3)： Ishii Kenta (Department of Engineering and Applied Sciences, Sophia University, Japan) ,  Amagasu Ryosuke (Department of Engineering and Applied Sciences, Sophia University, Japan) ,  Nomura Ichirou (Department of Engineering and Applied Sciences, Sophia University, Japan)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 512  Page： 96-99  Publication year： 2019 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： MgSe/ZnCdSe superlattices (SLs...

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Thesaurus term： interface (surface) ,  *substrate (plate) ,  doping ,  *optical element ,  *compound semiconductor ,  MBE growth ,  *indium phosphide ,  current density ,  superlattice ,  electrical resistivity ,  conduction band ,  *semiconductor ,  applied voltage

Author keywords (4)： A3.Superlattices ,  A3.Molecular beam epitaxy ,  B2.Semiconducting II-VI materials ,  B3.Heterojunction semiconductor devices

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (4)： InP ,  II-VI化合物半導体 ,  光学素子 ,  研究