Art

J-GLOBAL ID：201902240939612364   Reference number：19A1252593

Strain deformation in GaAs/GaAsBi core-shell nanowire heterostructures

GaAs/GaAsBiコア-シェルナノワイヤヘテロ構造における歪変形【JST・京大機械翻訳】

Author (5)： Matsuda T. (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime, 790-8577, Japan) ,  Takada K. (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime, 790-8577, Japan) ,  Yano K. (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime, 790-8577, Japan) ,  Shimomura S. (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime, 790-8577, Japan) ,  Ishikawa F. (Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime, 790-8577, Japan)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 125  Issue： 19  Page： 194301-194301-5  Publication year： 2019 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We present the growth and stra...

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Thesaurus term： coherence ,  *Bismuth ,  substrate (plate) ,  facet ,  lattice constant ,  *gallium arsenide ,  *nanowire ,  *core-shell structure ,  biaxial strain ,  local strain ,  heterointerface ,  synchrotron x-ray diffraction ,  micro beam ,  Silicon(111) ,  *hetero-structure

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (5)： GaAs ,  GaAsBi ,  コア-シェル ,  ナノワイヤ ,  ヘテロ構造