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J-GLOBAL ID:201902241738336668   Reference number:19A1414945

Quantitative measurement of active dopant density distribution in phosphorus-implanted monocrystalline silicon solar cell using scanning nonlinear dielectric microscopy

走査型非線形誘電顕微鏡を用いたリン注入単結晶シリコン太陽電池における活性ドーパント密度分布の定量的測定【JST・京大機械翻訳】
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Volume: 111  Issue:Page: 032101-032101-4  Publication year: 2017 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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The performance of silicon (Si...
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Solar cell  ,  Lattice defects in semiconductors 

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