Art

J-GLOBAL ID：201902246475020313   Reference number：19A2615988

Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

一段階プラズマ増強原子層堆積による高品質GaO_xN_y膜の組成と特性制御成長【JST・京大機械翻訳】

Author (10)： Ma Hong-Ping (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China) ,  Li Xiao-Xi (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China) ,  Yang Jia-He (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China) ,  Cheng Peihong (School of Physical Science and Technology, Shanghai Tech University, China) ,  Huang Wei (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China) ,  Zhu Jingtao (Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, China) ,  Jen Tien-Chien (University of Johannesburg, South Africa) ,  Guo Qixin (Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Japan) ,  Lu Hong-Liang (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China) ,  Zhang David Wei (State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China)
Material： Chemistry of Materials  (Chem Mater)
Volume： 31  Issue： 18  Page： 7405-7416  Publication year： 2019 
JST Material Number： T0893A  ISSN： 0897-4756  CODEN： CMATEX  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： This study provided a novel me...

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Thesaurus term： oxygen ,  nitrogen ,  *plasma ,  growth rate ,  gallium nitride ,  interface(surface) ,  spectrum ,  band gap ,  characterization ,  leakage current ,  valence band
Semi thesaurus term： 絶縁破壊電圧 ,  エネルギー帯 ,  チャンバ ,  *高品質 , 【Automatic Indexing@JST】

JST classification (2)： Bases,metal oxides  (CD01030Z) ,  Crystal structure of metal oxides and chalcogenides  (BK07020Y)

Terms in the title (7)： 段階 ,  プラズマ ,  増強 ,  原子層堆積 ,  高品質 ,  組成 ,  成長