Art

J-GLOBAL ID：201902249879675564   Reference number：19A1379632

Improvement of p-type GaAs_0.51Sb_0.49 metal-oxide-semiconductor interface properties by using ultrathin In_0.53Ga_0.47As interfacial layers

極薄In_0.53Ga_0.47As界面層を用いたp型GaAs_0.51Sb_0.49金属-酸化物-半導体界面特性の改善【JST・京大機械翻訳】

Author (6)： Gotow Takahiro (The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan) ,  Mitsuhara Manabu (NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan) ,  Hoshi Takuya (NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan) ,  Sugiyama Hiroki (NTT Device Technology Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan) ,  Takenaka Mitsuru (The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan) ,  Takagi Shinichi (The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 125  Issue： 21  Page： 214504-214504-9  Publication year： 2019 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The effects of interfacial In<...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=19A1379632&from=J-GLOBAL&jstjournalNo=C0266A") }}

Thesaurus term： substrate(plate) ,  potential barrier ,  indium gallium arsenide ,  conductance ,  *semiconductor ,  two dimension ,  condenser(capacitor) ,  *interface(surface) ,  indium phosphide ,  *oxide
Semi thesaurus term： 界面トラップ ,  デバイスシミュレータ ,  ヘテロ界面 ,  ヒ化アンチモン化ガリウム ,  *界面層 , 【Automatic Indexing@JST】

JST classification (1)： Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (3)： 界面層 ,  酸化物 ,  界面特性