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J-GLOBAL ID：201902251792722726   Reference number：19A0440832

Differences in Morphologies of GaN-Based Nanocrystals Grown on Metal-Foils and Multi-Crystalline Si Substrates

金属箔と多結晶Si基板上に成長させたGaN系ナノ結晶の形態の違い【JST・京大機械翻訳】

Author (4)： Sato Yuichi (Akita University, Department of Mathematical Science and Electrical-Electronic-Computer Engineering, Graduate School of Engineering Science, Akita, Japan) ,  Fujiwara Atomu (Akita University, Department of Mathematical Science and Electrical-Electronic-Computer Engineering, Graduate School of Engineering Science, Akita, Japan) ,  Trung Nguyen Duc (Akita University, Department of Mathematical Science and Electrical-Electronic-Computer Engineering, Graduate School of Engineering Science, Akita, Japan) ,  Saito Sora (Akita University, Department of Mathematical Science and Electrical-Electronic-Computer Engineering, Graduate School of Engineering Science, Akita, Japan)
Material： Materials Science Forum  (Mater Sci Forum)
Volume： 941  Page： 2109-2114  Publication year： 2019 
JST Material Number： D0716B  ISSN： 0255-5476  Document type： Article
Article type： 原著論文  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Abstract/Point： Gallium nitride (GaN)-based th...

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Thesaurus term： *substrate (plate) ,  *metal foil ,  thin film ,  *nano crystal ,  emission spectrum ,  *gallium nitride ,  *polysilicon ,  band edge emission

Author keywords (5)： InGaN ,  Nanocrystal ,  Multi-Crystalline Si ,  GaN ,  Metal-Foil

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (7)： 金属箔 ,  多結晶 ,  Si基板 ,  成長 ,  GaN ,  ナノ結晶 ,  形態