Art

J-GLOBAL ID：201902258007009128   Reference number：19A2461828

Low-temperature synthesis of GaN film from aqueous solution by electrodeposition

電着による水溶液からのGaN膜の低温合成【JST・京大機械翻訳】

Author (4)： Kang Jaewook (Department of Materials Science & Engineering, Graduate School of Engineering, Nagoya University, Nagoya, Japan) ,  Mitsuhashi Takuaki (Department of Materials Science & Engineering, Graduate School of Engineering, Nagoya University, Nagoya, Japan) ,  Kuroda Kensuke (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan) ,  Okido Masazumi (Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan)
Material： Journal of Applied Electrochemistry  (J Appl Electrochem)
Volume： 49  Issue： 9  Page： 871-881  Publication year： 2019 
JST Material Number： B0393B  ISSN： 0021-891X  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Gallium nitride (GaN) films we...

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Thesaurus term： Gallium ,  gallium oxide ,  *aqueous solution ,  current density ,  *low temperature ,  hexagonal system ,  Oxygen ,  Nitrogen ,  *electrodeposition ,  cyclic voltammetry ,  energy dispersive X-ray spectrometry ,  photoluminescence ,  *gallium nitride ,  band gap energy ,  surface morphology

Author keywords (5)： Electrochemical deposition ,  Cyclic voltammetry ,  GaN ,  Photoluminescence ,  Low-cost technique

JST classification (2)： Electrochemical processes and equipment in general  (XE02010I) ,  Chemical treatment of sewage and wastewater  (SC03050W)

Terms in the title (4)： 電着 ,  水溶液 ,  GaN ,  低温合成