Art

J-GLOBAL ID：201902258315329253   Reference number：19A2901151

Highly efficient formation process for functional silicon oxide layers at low temperatures (≦ 120 °C) using very high-frequency plasma under atmospheric pressure

大気圧下の超高周波プラズマを用いた低温(≦120°C)における機能性酸化けい素層の高効率形成プロセス【JST・京大機械翻訳】

Author (4)： Kakiuchi Hiroaki (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan) ,  Ohmi Hiromasa (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan) ,  Ohmi Hiromasa (Research Center for Ultra-Precision Science and Technology, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan) ,  Yasutake Kiyoshi (Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan)
Material： Precision Engineering  (Precis Eng)
Volume： 60  Page： 265-273  Publication year： 2019 
JST Material Number： A0734B  ISSN： 0141-6359  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： SiO₂-like films are...

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Thesaurus term： gate dielectric film ,  electric power ,  coated tool ,  flow rate ,  *silicon oxide ,  substrate temperature ,  quality ,  turbulent flow ,  *plasma ,  one dimensional flow ,  thin film transistor ,  *low temperature ,  thin film ,  plasma CVD
Semi thesaurus term： シリコンウエハ , 【Automatic Indexing@JST】

Author keywords (7)： Atmospheric-pressure plasma ,  Chemical ,  vapor ,  deposition ,  Silicon oxide ,  Hexamethyldisiloxane (HMDSO) ,  Very high-frequency plasma

JST classification (2)： Special machining  (QC04000Y) ,  Grinding  (QC03000R)

Terms in the title (8)： 大気圧 ,  高周波プラズマ ,  低温 ,  機能性 ,  酸化 ,  けい素層 ,  高効率 ,  形成プロセス