Art

J-GLOBAL ID：201902261184667758   Reference number：19A0992470

Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a [Formula : see text] Spin Hall Electrode

[数式:原文を参照]スピンHall電極の開発による電圧制御SPintronicメモリにおける書き込み効率の改善【JST・京大機械翻訳】

Author (15)： Kato Y. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Saito Y. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Yoda H. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Inokuchi T. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Shirotori S. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Shimomura N. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Oikawa S. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Tiwari A. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Ishikawa M. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Shimizu M. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Altansargai B. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Sugiyama H. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Koi K. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Ohsawa Y. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan) ,  Kurobe A. (Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan)
Material： Physical Review Applied
Volume： 10  Issue： 4  Page： 044011  Publication year： 2018 
JST Material Number： W3691A  ISSN： 2331-7019  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Improving the write efficiency...

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Thesaurus term： durability ,  *memory(computer) ,  nonvolatile memory ,  *voltage control ,  criticality ,  magnetic reluctance ,  magnetic anisotropy ,  boride ,  high speed ,  spintronics ,  *voltage ,  magnetics ,  amorphous state
Semi thesaurus term： 高密度 ,  磁気トンネル接合 , 【Automatic Indexing@JST】

JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Terms in the title (6)： 数式 ,  参照 ,  スピン ,  開発 ,  電圧制御 ,  書き込み