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J-GLOBAL ID：201902262178175746   Reference number：19A1414646

Anomalous Seebeck coefficient observed in silicon nanowire micro thermoelectric generator

シリコンナノワイヤマイクロ熱電発電機で観測された異常なSEebeck係数【JST・京大機械翻訳】

Author (9)： Hashimoto S. (Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan) ,  Asada S. (Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan) ,  Xu T. (Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan) ,  Oba S. (Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan) ,  Himeda Y. (Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan) ,  Yamato R. (Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan) ,  Matsukawa T. (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan) ,  Matsuki T. (Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan) ,  Watanabe T. (Faculty of Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 111  Issue： 2  Page： 023105-023105-4  Publication year： 2017 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We have found experimentally a...

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Thesaurus term： electric current ,  potential barrier ,  interface(surface) ,  oxide film ,  *nanowire ,  minority carrier ,  dry etching ,  insulator ,  silicon ,  negative electric charge ,  temperature gradient
Semi thesaurus term： 水素終端 ,  界面トラップ ,  *Seebeck係数 ,  *熱電発電機 , 【Automatic Indexing@JST】

JST classification (3)： Metallic thin films  (BK14030T) ,  Electric conduction in semiconductors and insulators in general  (BM03041P) ,  Lattice defects in semiconductors  (BK12040Q)

Terms in the title (3)： 熱電発電機 ,  観測 ,  Seebeck係数