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J-GLOBAL ID：201902267624542481   Reference number：19A0299183

Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum Hall regime

量子Hall領域におけるHBN/グラフェン/HBNの量子点接触を通る電子輸送に対するギャップ幅の効果【JST・京大機械翻訳】

Author (11)： Ahmad Nurul Fariha (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Iwasaki Takuya (International Center for Young Scientists, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Komatsu Katsuyoshi (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Watanabe Kenji (Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Taniguchi Takashi (Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan) ,  Mizuta Hiroshi (School of Material Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1211, Japan) ,  Wakayama Yutaka (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Hashim Abdul Manaf (Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Sultan Yahya Petra, 54100 Kuala Lumpur, Malaysia) ,  Morita Yoshifumi (Faculty of Engineering, Gunma University, Kiryu, Gunma 376-8515, Japan) ,  Moriyama Satoshi (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan) ,  Nakaharai Shu (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 114  Issue： 2  Page： 023101-023101-5  Publication year： 2019 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： This study investigates quanti...

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Thesaurus term： forecast ,  channel ,  *graphene ,  quantization ,  backward scattering ,  electrostatic potential ,  high mobility ,  *electron transport
Semi thesaurus term： ゲートバイアス ,  トップゲート ,  量子コンダクタンス ,  スプリットゲート ,  *量子点接触 , 【Automatic Indexing@JST】

JST classification (1)： General theory of electronic transport  (BM03020C)

Terms in the title (5)： 量子 ,  グラフェン ,  量子点接触 ,  電子輸送 ,  ギャップ幅