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J-GLOBAL ID：201902268321103401   Reference number：19A2704733

Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development

X線イメージング検出器開発のための(211)Si基板上の厚く均一な単結晶CdTeエピタキシャル層の有機金属気相エピタクシー【JST・京大機械翻訳】

Author (6)： Niraula M. (Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Japan) ,  Yasuda K. (Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Japan) ,  Torii R. (Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Japan) ,  Tamura R. (Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Japan) ,  Higashira Y. (Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Japan) ,  Agata Y. (Graduate School of Engineering, Nagoya Institute of Technology, Nagoya, Japan)
Material： Journal of Electronic Materials  (J Electron Mater)
Volume： 48  Issue： 12  Page： 7680-7685  Publication year： 2019 
JST Material Number： D0277B  ISSN： 0361-5235  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Metalorganic vapor phase epita...

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Thesaurus term： *cadmium telluride ,  heterojunction ,  pixel ,  *detector ,  *MOCVD ,  *X-ray image ,  dark current ,  rocking curve ,  *single crystal ,  *crystal ,  *epitaxy ,  *X-ray ,  crystal quality ,  *epitaxial layer ,  *Si wafer

Author keywords (5)： MOVPE ,  CdTe ,  thick epitaxial growth ,  heterojunction device ,  x-ray imaging array

JST classification (2)： Radiation detection and detectors  (AD08020J) ,  Semiconductor thin films  (BK14040E)

Terms in the title (8)： X線イメージング ,  検出器 ,  開発 ,  Si基板 ,  単結晶 ,  CdTe ,  エピタキシャル層 ,  有機金属気相エピタクシー