Art

J-GLOBAL ID：201902270233951720   Reference number：19A0016742

High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

単結晶h-BNゲート誘電体を用いた高移動度ダイヤモンド電界効果トランジスタ【JST・京大機械翻訳】

Author (9)： Sasama Yosuke (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan) ,  Komatsu Katsuyoshi (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan) ,  Moriyama Satoshi (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan) ,  Imura Masataka (Research Center for Functional Materials, National Institute for Materials Science, Namiki, Tsukuba 305-0044, Japan) ,  Teraji Tokuyuki (Research Center for Functional Materials, National Institute for Materials Science, Namiki, Tsukuba 305-0044, Japan) ,  Watanabe Kenji (Research Center for Functional Materials, National Institute for Materials Science, Namiki, Tsukuba 305-0044, Japan) ,  Taniguchi Takashi (Research Center for Functional Materials, National Institute for Materials Science, Namiki, Tsukuba 305-0044, Japan) ,  Uchihashi Takashi (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan) ,  Takahide Yamaguchi (International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan)
Material： APL Materials (Web)
Volume： 6  Issue： 11  Page： 111105-111105-8  Publication year： 2018 
JST Material Number： U7122A  ISSN： 2166-532X  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Diamond is a wide bandgap semi...

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Thesaurus term： amorphous state ,  *diamond ,  electric field ,  *dielectrics ,  converter ,  *FET ,  *mobility(ratio) ,  interface(surface) ,  semiconductor ,  high temperature ,  *single crystal ,  carrier density ,  band gap ,  *gate dielectric film
Semi thesaurus term： ヘテロ構造 , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (6)： 単結晶 ,  h-BN ,  ゲート誘電体 ,  高移動度 ,  ダイヤモンド ,  電界効果トランジスタ