Art

J-GLOBAL ID：201902275336368519   Reference number：19A1607214

Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT

1200VスケールIGBT用の自己ターンオンフリー5Vゲート駆動【JST・京大機械翻訳】

Author (13)： Tsukuda Masanori (Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan) ,  Sudo Masaki (Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan) ,  Hasegawa Kazunori (Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan) ,  Abe Seiya (Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan) ,  Saraya Takuya (The University of Tokyo, Tokyo, Japan) ,  Takakura Toshihiko (The University of Tokyo, Tokyo, Japan) ,  Fukui Munetoshi (The University of Tokyo, Tokyo, Japan) ,  Itou Kazuo (The University of Tokyo, Tokyo, Japan) ,  Suzuki Shinichi (The University of Tokyo, Tokyo, Japan) ,  Takeuchi Kiyoshi (The University of Tokyo, Tokyo, Japan) ,  Ninomiya Tamotsu (Green Electronics Research Institute, Kitakyushu, Fukuoka, Japan) ,  Hiramoto Toshiro (The University of Tokyo, Tokyo, Japan) ,  Omura Ichiro (Kyushu Institute of Technology, Kitakyushu, Fukuoka, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： ISPSD  Page： 339-342  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Negative biasing of the gate v...

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Thesaurus term： *turn-on ,  *IGBT ,  failure ,  modeling ,  bias
Semi thesaurus term： ゲート電圧 ,  オフ状態 , 【Automatic Indexing@JST】

JST classification (1)： Speach processing  (JE05000E)

Terms in the title (5)： スケール ,  IGBT ,  自己 ,  ターンオン ,  ゲート