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J-GLOBAL ID：201902279020831405   Reference number：19A0645580

β-Ga₂O₃/p-Type 4H-SiC Heterojunction Diodes and Applications to Deep-UV Photodiodes

β-Ga_2O_3/p型4H-SiCヘテロ接合ダイオードと深紫外フォトダイオードへの応用【JST・京大機械翻訳】

Author (4)： Nakagomi Shinji (Faculty of Science and Engineering, Department of Information Technology and Electronics, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan) ,  Sakai Toshihide (Faculty of Science and Engineering, Department of Information Technology and Electronics, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan) ,  Kikuchi Kentaro (Faculty of Science and Engineering, Department of Information Technology and Electronics, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan) ,  Kokubun Yoshihiro (Faculty of Science and Engineering, Department of Information Technology and Electronics, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan)
Material： Physica Status Solidi. A. Applications and Materials Science  (Physica Status Solidi. A.)
Volume： 216  Issue： 5  Page： e1700796  Publication year： 2019 
JST Material Number： D0774A  ISSN： 1862-6300  CODEN： PSSABA  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Here, pn heterojunction diodes...

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Thesaurus term： *diode ,  *heterojunction ,  current-voltage characteristic ,  response characteristic ,  rectification (electric) ,  pulse ,  high temperature ,  *photodiode ,  *silicon carbide ,  temperature range ,  *deep UV
Semi thesaurus term： 実時間 ,  整流比 ,  4H-SiC , 【Automatic Indexing@JST】

Author keywords (5)： β-Ga2O3 ,  4H-SiC ,  deep-ultraviolet ,  high temperature ,  photodiodes

JST classification (2)： Light emitting devices  (NC03082G) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (6)： 4H-SiC ,  ヘテロ接合 ,  ダイオード ,  深紫外 ,  フォトダイオード ,  応用