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J-GLOBAL ID：201902287089192647   Reference number：19A1467444

Correlation in transport coefficients of hole-doped [Formula : see text] single crystals

正孔ドープ[数式:原文を参照]単結晶の輸送係数における相関【JST・京大機械翻訳】

Author (3)： Kurita K. (Department of Physics, Faculty of Science and Technology, Tokyo University of Science, Noda 278-8510, Japan) ,  Sakabayashi H. (Department of Physics, Faculty of Science and Technology, Tokyo University of Science, Noda 278-8510, Japan) ,  Okazaki R. (Department of Physics, Faculty of Science and Technology, Tokyo University of Science, Noda 278-8510, Japan)
Material： Physical Review. B  (Physical Review. B. Covering Condensed Matter and Materials Physics)
Volume： 99  Issue： 11  Page： 115103  Publication year： 2019 
JST Material Number： D0746A  ISSN： 2469-9950  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： To clarify the origin of the n...

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Thesaurus term： *doping ,  low temperature ,  *single crystal ,  drag ,  oxide ,  Magnesium ,  *positive hole ,  temperature dependence ,  *transport coefficient ,  *crystal ,  phonon ,  polycrystal ,  electrical resistivity ,  Seebeck coefficient ,  delafossite

JST classification (2)： Electric conduction in crystalline semiconductors  (BM03043X) ,  Electric conduction in other inorganic compounds  (BM03044O)

Terms in the title (7)： 正孔 ,  ドープ ,  数式 ,  参照 ,  単結晶 ,  輸送係数 ,  相関