Art

J-GLOBAL ID：201902289987642566   Reference number：19A0332287

Spin-dependent resonant tunneling and magnetoresistance in Ni/graphene/h-BN/graphene/Ni van der Waals heterostructures

Ni/グラフェン/h-BN/グラフェン/Ni van der Waalsヘテロ構造におけるスピン依存共鳴トンネリングと磁気抵抗【JST・京大機械翻訳】

Author (11)： Qiu Weicheng (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Peng Junping (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Pan Mengchun (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Hu Yueguo (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Ji Minhui (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Hu Jiafei (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Tian Wugang (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Chen Dixiang (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Zhang Qi (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Li Peisen (College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, China) ,  Li Peisen (College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073, China)
Material： Journal of Magnetism and Magnetic Materials  (J Magn Magn Mater)
Volume： 476  Page： 622-627  Publication year： 2019 
JST Material Number： H0644A  ISSN： 0304-8853  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Future development of spintron...

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Thesaurus term： functional material ,  magnetic resonance ,  *graphene ,  spintronics ,  bias ,  ferromagnet ,  logic element ,  *resonance tunnel effect ,  interface(surface) ,  *magnetics ,  *magnetic reluctance
Semi thesaurus term： 磁気トンネル接合 ,  スピン電流 ,  スピントロニクス素子 ,  *ヘテロ構造 , 【Automatic Indexing@JST】

JST classification (3)： Theory of magnetic properties  (BM06020X) ,  Magnetic domain and magnetization process in general  (BM06111M) ,  Magnetic materials  (NA04040H)

Terms in the title (8)： Ni ,  グラフェン ,  h-BN ,  VAN ,  ヘテロ構造 ,  スピン ,  共鳴トンネリング ,  磁気抵抗