Art

J-GLOBAL ID：201902292134770438   Reference number：19A1398538

Disorder and Weak Localization near Charge Neutral Point in Ti-cleaned Single-Layer Graphene

Ti洗浄単層グラフェンにおける電荷中性点近傍の無秩序性と弱局在化【JST・京大機械翻訳】

Author (12)： Fujimoto Akira (Faculty of Engineering, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku Osaka, 535-8585, Japan) ,  Fujimoto Akira (Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku Osaka, 535-8585, Japan) ,  Perini Christopher J. (School of Materials Science & Engineering, Georgia Tech, 345 Ferst Drive NW Atlanta, Georgia, 30332, United States) ,  Terasawa Daiju (Department of Physics, Hyogo College of Medicine, 1-1 Mukogawacho Nishinomiya, Hyogo, 663-8501, Japan) ,  Fukuda Akira (Department of Physics, Hyogo College of Medicine, 1-1 Mukogawacho Nishinomiya, Hyogo, 663-8501, Japan) ,  Harada Yoshiyuki (Faculty of Engineering, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku Osaka, 535-8585, Japan) ,  Harada Yoshiyuki (Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku Osaka, 535-8585, Japan) ,  Sasa Shigehiko (Faculty of Engineering, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku Osaka, 535-8585, Japan) ,  Sasa Shigehiko (Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku Osaka, 535-8585, Japan) ,  Yano Mitsuaki (Faculty of Engineering, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku Osaka, 535-8585, Japan) ,  Yano Mitsuaki (Nanomaterials Microdevices Research Center, Osaka Institute of Technology, 5-16-1 Ohmiya Asahi-ku Osaka, 535-8585, Japan) ,  Vogel Eric M. (School of Materials Science & Engineering, Georgia Tech, 345 Ferst Drive NW Atlanta, Georgia, 30332, United States)
Material： Physica Status Solidi. B. Basic Solid State Physics  (Phys Status Solidi B Basic Solid State Phys)
Volume： 256  Issue： 6  Page： e1800541  Publication year： 2019 
JST Material Number： C0599A  ISSN： 0370-1972  CODEN： PSSBBD  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The charge neutral point (CNP)...

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Thesaurus term： *electric charge ,  voltage ,  electric charge distribution ,  positive hole ,  *titanium ,  temperature dependence ,  carrier density ,  inelastic scattering ,  Fermi level ,  doping ,  *graphene ,  impurity
Semi thesaurus term： 輸送特性 ,  *弱局在 ,  *単層グラフェン , 【Automatic Indexing@JST】

Author keywords (5)： electron-hole puddles ,  graphene ,  Raman spectroscopy ,  Ti-cleaning ,  weak localization

JST classification (2)： Transistors  (NC03070N) ,  Carbon and its compounds  (YB02060D)

Terms in the title (8)： Ti ,  洗浄 ,  単層グラフェン ,  電荷 ,  中性点 ,  近傍 ,  無秩序性 ,  弱局在