Dominant conduction mechanism in TaO<sub>x</sub>-based resistive switching devices

MIYATANI Toshiki; NISHI Yusuke; KIMOTO Tsunenobu

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J-GLOBAL ID：201902295069982009 Reference number：19A2686133

Dominant conduction mechanism in TaO_x-based resistive switching devices

TaO_xを用いた抵抗スイッチング素子における支配的伝導機構

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Material：
Volume： 58 Issue： 9 Page： 090914.1-090914.4 Publication year： Sep. 2019
JST Material Number： G0520B ISSN： 0021-4922 CODEN： JJAPB6 Document type： Article
Article type：短報 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Electric conduction in other inorganic compounds

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Dominant conduction mechanism in TaOx-based resistive switching devices

Dominant conduction mechanism in TaO_x-based resistive switching devices