Rchr
J-GLOBAL ID：202001000305420995
Update date: Sep. 18, 2024
KUBOYA SHIGEYUKI
クボヤ シゲユキ | KUBOYA SHIGEYUKI
Affiliation and department：
Job title：
特任准教授(研究担当)
Research theme for competitive and other funds (5)：
- 2021 - 2022 二次元層状物質を導入した反転積層窒化物深紫外発光素子の研究
- 2014 - 2017 Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light Sources
- 2012 - 2015 Generation and control of quantum correlated photons from atomic-layer doped semiconductors
- 2010 - 2012 Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures
- 2009 - 2011 Single Photon Generation from locally doped semiconductors
Papers (62)：
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Takashi Matsuoka, Hitoshi Morioka, Satoshi Semboshi, Yukihiko Okada, Kazuya Yamamura, Shigeyuki Kuboya, Hiroshi Okamoto, Tsuguo Fukuda. Properties of ScAlMgO4 as Substrate for Nitride Semiconductors. Crystals. 2023. 13. 3. 449-449
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Bojin Lin, Hnin Lai Lai Aye, Yuto Imae, Kotaro Hayashi, Haruki Orito, Bei Ma, Shigeyuki Kuboya, Hideto Miyake, Yoshihiro Ishitani. Thermal radiation resonating with longitudinal optical phonon from surface micro-stripe structures on metal-gallium nitride and sapphire. Materials Science in Semiconductor Processing. 2022. 147. 106726-106726
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Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Shiyu Xiao, Takao Nakamura, Masataka Kubo, Hideto Miyake. 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities. Applied Physics Express. 2022. 15. 5. 055501-055501
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Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake. Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns. Journal of Crystal Growth. 2021. 570. 126237-126237
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Kenjiro Uesugi, Kanako Shojiki, Shiyu Xiao, Shigeyuki Kuboya, Hideto Miyake. Effect of the Sputtering Deposition Conditions on the Crystallinity of High-Temperature Annealed AlN Films. Coatings. 2021. 11. 8. 956-956
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MISC (7)：
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Development of UV-C LED using high-temperature annealed sputter-deposited AlN template. 2021. 2021. 34. 17-22
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渋谷康太, 上杉謙次郎, 上杉謙次郎, XIAO Shiyu, 正直花奈子, 窪谷茂幸, 秋山亨, 三宅秀人, 三宅秀人. Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire. 電子情報通信学会技術研究報告(Web). 2021. 121. 259(ED2021 15-36)
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渋谷康太, 上杉謙次郎, 上杉謙次郎, XIAO S., 正直花奈子, 窪谷茂幸, 秋山亨, 三宅秀人, 三宅秀人. Substrates Off-Cut Dependence on the Crystallinity of the a-plane AlN Prepared by Sputtering and Annealing Method. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2021. 82nd
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Fabrication of Low-Dislocation-Density AlN Templates for Deep-Ultraviolet Light-Emitting Diodes Applications. 2020. 47. 3. 1-10
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Crystal Growth Technology of N-polar Nitride Semiconductors by Metalorganic Vapor Phase Epitaxy. 2018. 45. 1. 8p
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Work history (6)：
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