Hirai Hirohisa

Research theme for competitive and other funds (3)：

2022 - 2025 Development of lightly-tilted crystal face trench MOS channels toward the realization of ultra-low resistance GaN power devices
2021 - 2024 SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減
2015 - 2018 4H-SiC熱酸化界面構造の理解に基づくMOSFET高性能化のための材料設計

Papers (21)：

Mitsuru Sometani, Yusuke Nishiya, Ren Kondo, Rei Inohana, Hongyu Zeng, Hirohisa Hirai, Dai Okamoto, Yu-ichiro Matsushita, Takahide Umeda. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface. APL Materials. 2023
Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 2022. 131. 14. 145701-145701
Hirohisa Hirai, Yoshinao Miura, Akira Nakajima, Shinsuke Harada, Hiroshi Yamaguchi. Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors. APPLIED PHYSICS LETTERS. 2021. 119. 7
Hiroki Sakata, Dai Okamoto, Mitsuru Sometani, Mitsuo Okamoto, Hirohisa Hirai, Shinsuke Harada, Tetsuo Hatakeyama, Hiroshi Yano, Noriyuki Iwamuro. Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method. Japanese Journal of Applied Physics. 2021. 60. 6. 060901-060901
Shogo Sekine, Masakazu Okada, Teruaki Kumazawa, Mitsuru Sometani, Hirohisa Hirai, Naoya Serizawa, Ryu Hasunuma, Mitsuo Okamoto, Shinsuke Harada. Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation. Japanese Journal of Applied Physics. 2021. 60. {SB}

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MISC (5)：

平井悠久, 三浦喜直, 中島昭, 原田信介, 山口浩. Crystal face dependence of channel characteristics of GaN UMOS subjected to TMAH treatment. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
Miura Yoshinao, Hirai Hirohisa, Nakajima Akira, Harada Shinsuke. A New JTE Technique for Vertical GaN Power Devices by Conductivity Control Using Boron Implantation into p-Type Layer. IEEE Conference Proceedings. 2021. 2021. ISPSD
Hirohisa Hirai, Koji Kita. Effects of high-temperature diluted-H-2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO2 (Retraction of Vol 55, 10.7567/JJAP.55.04ER16, 2016). JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 7
HIRAI Hirohisa, KITA Koji. Oxidation-ambience-dependent near-interface structure of thermally grown oxide on 4H-SiC. Technical report of IEICE. SDM. 2014. 114. 88. 97-100
KITA Koji, Hirai Hirohisa. Study on Near-interface Structures of Thermal Oxides Grown on 4H-SiC Characterized by Infrared Spectroscopy. Technical report of IEICE. SDM. 2013. 113. 87. 97-100

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