Hirai Hirohisa

Research theme for competitive and other funds (3)：

2022 - 2025 Development of lightly-tilted crystal face trench MOS channels toward the realization of ultra-low resistance GaN power devices
2021 - 2024 SiC-MOS界面特有の散乱体の起源検証とその抑制によるチャネル抵抗低減
2015 - 2018 4H-SiC熱酸化界面構造の理解に基づくMOSFET高性能化のための材料設計

Papers (25)：

Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe. Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs. Applied Physics Letters. 2024. 125. 25
Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada. 3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls. IEEE Electron Device Letters. 2024
Mitsuru Sometani, Yusuke Nishiya, Ren Kondo, Rei Inohana, Hongyu Zeng, Hirohisa Hirai, Dai Okamoto, Yu-ichiro Matsushita, Takahide Umeda. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface. APL Materials. 2023
Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 2022. 131. 14. 145701-145701
Hirohisa Hirai, Yoshinao Miura, Akira Nakajima, Shinsuke Harada, Hiroshi Yamaguchi. Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors. APPLIED PHYSICS LETTERS. 2021. 119. 7

ｍore...

MISC (5)：

平井悠久, 三浦喜直, 中島昭, 原田信介, 山口浩. Crystal face dependence of channel characteristics of GaN UMOS subjected to TMAH treatment. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
Miura Yoshinao, Hirai Hirohisa, Nakajima Akira, Harada Shinsuke. A New JTE Technique for Vertical GaN Power Devices by Conductivity Control Using Boron Implantation into p-Type Layer. IEEE Conference Proceedings. 2021. 2021. ISPSD
Hirohisa Hirai, Koji Kita. Effects of high-temperature diluted-H-2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO2 (Retraction of Vol 55, 10.7567/JJAP.55.04ER16, 2016). JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 7
HIRAI Hirohisa, KITA Koji. Oxidation-ambience-dependent near-interface structure of thermally grown oxide on 4H-SiC. Technical report of IEICE. SDM. 2014. 114. 88. 97-100
KITA Koji, Hirai Hirohisa. Study on Near-interface Structures of Thermal Oxides Grown on 4H-SiC Characterized by Infrared Spectroscopy. Technical report of IEICE. SDM. 2013. 113. 87. 97-100

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