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J-GLOBAL ID:202001001837401898   Update date: Sep. 10, 2021

Watanabe Heiji

ワタナベ ヘイジ | Watanabe Heiji
Affiliation and department:
Job title: 教授
Homepage URL  (1): http://www-ade.prec.eng.osaka-u.ac.jp/index.html
Research theme for competitive and other funds  (28):
  • 2019 - 2023 界面反応制御を基軸とした高効率高信頼性GaN半導体MOSデバイスの創成
  • 2015 - 2018 Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
  • 2013 - 2018 Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic properties
  • 2015 - 2017 Development of Super-resolution Technique in Transmission X-ray Imaging using Embedded X-ray Targets
  • 2015 - 2017 Improvement of SiO2/SiC interface properties with beam induced interface reactions and subsequent defect passivation
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Papers (915):
  • Kidist Moges, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation. Applied Physics Express. 2021. 14. 9. 091006-091006
  • Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe. Backscattering X-ray imaging using Fresnel zone aperture. Applied Physics Express. 2021. 14. 7. 072002-072002
  • Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuji Hosoi, Tetsuo Narita, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe. Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway. Applied Physics Express. 2021. 14. 7. 071001-071001
  • Nguyen Hoai Ngo, Kazuhiro Shimonomura, Taeko Ando, Takayoshi Shimura, Heiji Watanabe, Kohsei Takehara, Anh Quang Nguyen, Edoardo Charbon, Takeharu Goji Etoh. A Pixel Design of a Branching Ultra-Highspeed Image Sensor. Sensors. 2021. 21. 7. 2506-2506
  • Origin of Anomalous Fixed Charges at the SiO2/GaN Interface due to Forming Gas Annealing. 2021. 195-199
more...
Patents (21):
  • X線位相差撮像装置
  • 単結晶状GeSn含有材料の製造方法および単結晶状GeSn含有材料基板
  • 高誘電率薄膜を用いた半導体装置の製造方法
  • 半導体装置およびその製造方法
  • 半導体装置およびその製造方法
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Books (1):
  • Fundamental Aspects of Silicon Oxidation, Springer (Layer-by-Layer Oxidation of Si(001) Surfaces, pp.89-105.)
    Springer 2001
Lectures and oral presentations  (6):
  • Fixed Charge Generation in SiO2/GaN MOS Structures by Forming Gas Annealing and its Suppression by Controlling Ga-oxide Interlayer Growth
    (2021 International Conference on Solid State Devices and Materials (SSDM 2021) 2021)
  • Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO2/4H-SiC(11-20) Interfaces
    (2021 International Conference on Solid State Devices and Materials (SSDM 2021) 2021)
  • A Branching Image Sensor for Sub-nanosecond Burst Imaging
    (2021)
  • Super-temporal-resolution Image Sensor -- Beyond the Theoretical Highest Frame Rate of Silicon Image Sensors --
    (2021)
  • Optoelectronic Integration Based on High-quality GeSn Grown by Liquid Phase Crystallization
    (International Conference on Processing & Manufacturing of Advanced Materials (Thermec’2021) 2021)
more...
Education (2):
  • - 1990 Osaka University
  • - 1988 Osaka University
Work history (15):
  • 2020/04/01 - 現在 Osaka University Graduate School of Engineering . Professor
  • 2019/08 - 現在 大阪大学大学院工学研究科副研究科長
  • 2017/04 - 現在 大阪大学・栄誉教授
  • 2014/04 - 現在 大阪大学大学院工学研究科執行部(総務室長)
  • 2006/11 - 現在 大阪大学大学院工学研究科生命先端工学専攻 教授
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Awards (15):
  • 2021/08 - The 43rd JSAP Award for Best Review Paper Defect engineering in SiC technology for high-voltage power devices
  • 2019/04 - 文部科学省 文部科学大臣表彰(科学技術賞・研究部門)
  • 2015/07 - Osaka University The 4th Presidential Awards for Achievement in Research, Osaka University
  • 2014/07 - Osaka University The 3rd Presidential Awards for Achievement in Research, Osaka University
  • 2011/07 - Osaka University 2011 Osaka University Achievement Awards in Research
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Association Membership(s) (3):
The Japan Society of Vacuum and Surface Science ,  IEEE ,  応用物理学会
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