Rchr
J-GLOBAL ID：202001009053120907
Update date: May. 26, 2024
Irisawa Toshifumi
イリサワ トシフミ | Irisawa Toshifumi
Affiliation and department：
Job title：
主任研究員
Research field (4)：
Electronic devices and equipment
, Electric/electronic material engineering
, Crystal engineering
, Nanomaterials
Research theme for competitive and other funds (2)：
- 2021 - 2026 Crystalline polymorphic-change memory technology
- 2017 - 2022 Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transfer
Papers (132)：
-
Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Toshifumi Irisawa. Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions. Applied Physics Express. 2024
-
Mitsuhiro Okada, Yuki Okigawa, Takeshi Fujii, Takahiko Endo, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Yasumitsu Miyata, Tetsuo Shimizu, Toshitaka Kubo, et al. Characterization of band alignment at a metal-MoS2 interface by Kelvin probe force microscopy. Japanese Journal of Applied Physics. 2024
-
Shota Nunomura, Hiroyuki Ota, Toshifumi Irisawa, Kazuhiko Endo, Yukinori Morita. Defect generation and recovery in high-k HfO2/SiO2/Si stack fabrication. Applied Physics Express. 2023
-
Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Naoya Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa. Sb2Te3/MoS2 Van der Waals Junctions with High Thermal Stability and Low Contact Resistance. Advanced Electronic Materials. 2023. 9. 4
-
Jiang Pu, Hao Ou, Tomoyuki Yamada, Naoki Wada, Hibiki Naito, Hiroto Ogura, Takahiko Endo, Zheng Liu, Toshifumi Irisawa, Kazuhiro Yanagi, et al. Continuous color-tunable light-emitting devices based on compositionally graded monolayer transition metal dichalcogenide alloys. Advanced Materials. 2022. 2203250-2203250
ｍore...
MISC (8)：
-
安藤淳, 久保利隆, 岡田直也, 入沢寿史. Synthesis of MoS2 chemical vapor deposition films by different Mo metal sources. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
-
岡田光博, 岡田直也, CHANG Wen-Hsin, 清水哲夫, 久保利隆, 石原正統, 入沢寿史. Gas-source chemical vapor deposition growth of micrometer-scale tungsten disulfide atomic layers under alkali-metal free condition. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
-
安藤淳, 久保利隆, 入沢寿史. Morphological evaluation on large-scale continuous MoS2 films grown by chemical vapor deposition by scanning probe methods. 日本表面真空学会学術講演会要旨集(Web). 2020. 2020
-
岡田光博, 入沢寿史, 岡田直也, CHANG Wen-Hsin, 清水哲夫, 久保利隆. MoS2 lateral p-n homojunction by substitutional doping. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
-
岡田光博, 岡田直也, CHANG Wen-Hsin, 清水哲夫, 久保利隆, 入沢寿史. ガスソースCVD成長におけるWS2原子層の結晶粒径均一化現象. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2019. 66th
ｍore...
Education (2)：
- - 2003 The University of Tokyo
- - 1998 東京大学 工学部 物理工学科
Work history (2)：
- 2015/04 - 現在 National Institute of Advanced Industrial Science and Technology
- 2003/04 - 2015/03 株式会社東芝 研究開発センター
Association Membership(s) (2)：
Return to Previous Page
