J-GLOBAL ID:202001018676946651   Update date: Mar. 22, 2024

Sato Shino

サトウ シノ | Sato Shino
Affiliation and department:
Research field  (2): Electric/electronic material engineering ,  Nanostructure physics
Research keywords  (5): 半導体光物性 ,  spin dynamics ,  epitaxial growth ,  semiconductor quantum dot ,  spintronics
Research theme for competitive and other funds  (1):
  • 2021 - 2024 室温スピン偏極半導体ナノ材料の実現によるスピン光デバイスの開発
Papers (6):
  • Shino Sato, Satoshi Hiura, Junichi Takayama, Akihiro Murayama. Effect of dilute nitride GaNAs quantum well thickness on spin amplification dynamics of tunnel-coupled InAs quantum dots. Applied Physics Letters. 2023. 123. 23
  • Keisuke Minehisa, Ryo Murakami, Hidetoshi Hashimoto, Kaito Nakama, Kenta Sakaguchi, Rikuo Tsutsumi, Takeru Tanigawa, Mitsuki Yukimune, Kazuki Nagashima, Takeshi Yanagida, et al. Wafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy. Nanoscale Advances. 2023
  • Yuqing Huang, Ville Polojärvi, Satoshi Hiura, Pontus Höjer, Arto Aho, Riku Isoaho, Teemu Hakkarainen, Mircea Guina, Shino Sato, Junichi Takayama, et al. Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering. Nature Photonics. 2021
  • S. Hiura, M. Takishita, J. Takayama, S. Sato, A. Murayama. Highly efficient room-temperature electron-photon spin conversion using semiconductor hybrid nanosystem with gradual quantum dimensionality reduction. Physical Review Applied. 2020. 14. 4. 044011
  • S. Sato, S. Hiura, J. Takayama, A. Murayama. Suppression of thermally excited electron-spin relaxation in InGaAs quantum dots using p-doped capping layers toward enhanced room-temperature spin polarization. Applied Physics Letters. 2020. 116. 18. 182401:1-5-182401
Lectures and oral presentations  (24):
  • Room-temperature electron-photon spin conversion based on III-V semiconductor quantum dot
    (Opinion Exchange Meeting of Hokkaido University-Hitachi Joint Cooperative Support Program for Education and Research in Hitachi Cambridge Laboratory 2023)
  • Room-temperature electron spin transport to InAs quantum dots using a dilute nitride GaNAs/GaAs superlattice barrier
    (36th International Microprocesses and Nanotechnology Conference 2023)
  • Optical spin dynamics of InAs quantum dots tunnel-coupled with dilute nitride GaNAs quantum well with different thicknesses
    (84th JSPS Autumn Meeting 2023 2023)
  • Electron spin transport to InAs quantum dots using dilute nitride GaNAs/GaAs superlattice barrier
    (84th JSPS Autumn Meeting 2023 2023)
  • Circularly polarized light emission properties of InAs quantum dots tunnel-coupled with a dilute nitride GaNAs quantum well with different thicknesses
    (,83th JSPS Autumn Meeting 2022 2022)
Education (3):
  • 2021 - 2024 Graduate School of Information Science and Technology, Hokkaido Univ. Electronics for Informatics
  • 2019 - 2021 Hokkaido University
  • 2015 - 2019 Hokkaido University School of Engineering Department of Electronics and Information Engineering
Awards (4):
  • 2024/03 - Hokkaido Univ., Office of Diversity, Equity, and Inclusion Ohtsuka Memorial Award
  • 2021/03 - 北海道大学 大学院情報科学院 北海道大学大学院情報科学院学院長賞
  • 2020/10 - Spintronics Society of JSAP 2020年秋季応用物理学会 第14回英語講演奨励賞 Suppression of thermal spin relaxation of InGaAs quantum dots by p-doping
  • 2019/09 - SemiconNano2019 Best Poster Award P-doping Effects on Temperature-Dependet Spin Dynamics in InGaAs Quantum Dots
Association Membership(s) (1):
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